Transistor reliability after radiation exposure
نویسندگان
چکیده
منابع مشابه
45nm Transistor Reliability
It has been clear for a number of years that increasing transistor gate leakage with device scaling would ultimately necessitate an alternative to traditional SiON dielectrics with polysilicon gates. Material systems providing higher dielectric constants, and therefore allowing physically thicker dielectrics, have been the object of extensive research. Such high-k dielectrics, when combined wit...
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ژورنال
عنوان ژورنال: Proceedings of the IEEE
سال: 1963
ISSN: 0018-9219
DOI: 10.1109/proc.1963.1969